Rad Hard MOSFETs offer Better Efficiency

December 10, 2013 | 14:37
Rad Hard MOSFETs offer Better Efficiency
Rad Hard MOSFETs offer Better Efficiency

International Rectifier have introduced two high performance R8 radiation hardened power MOSFETs optimized for space grade point-of-load (POL) voltage regulator applications.

These new R8 logic level power devices utilize Trench technology to give an RDSon of 12 milliohms (typical) and total gate charge (QG) of just 18nC (typical) thereby increasing efficiency by up to 6% compared to existing solutions. The IRHLNM87Y20SCS device has a BVDSS rating of 20V and a maximum drain current of 17A. The new devices are available in IR’s new SMD 0.2 surface-mount style package, which achieves a 50% reduced footprint compared to the existing SMD 0.5 package solution. A TO-39 package option is also available as well as the die form for microcircuit applications.

The MOSFETS are suited to radiation environments and are fully characterized for performance to 300Krads of TID and SEE with LET of 81 MeV-cm2/mg with VGS rating of 12V.  Depending on the intended design orbit and anticipated radiation environment, R8 RAD-Hard MOSFETs may be suitable for applications with a mission life in excess of 15 years.
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