Plessey has released samples of their new gallium nitride (GaN) on silicon LEDs. These entry level products, fabricated on 6-inch wafers, are the first LEDs manufactured using GaN on silicon technology to be commercially available anywhere in the world.
Manufactured using Plessy’s proprietary large diameter GaN on silicon process technology, the LEDs are fabricated on a 6-inch line at Plessy’s facility in Plymouth, England. According to Plessey, the combination of standard semiconductor manufacturing processing and the 6-inch fab line provides yields of greater than 95% and fast turnaround , creating significant cost advantage over sapphire and silicon carbide based solutions for LEDs of similar quality.
Plessey plans to release additional products in the GaN on silicon family during the course of the year and is reportedly considering options for extending fabrication to larger wafer sizes.