The new 800V CoolMOS MOSFET from Infineon

September 14, 2016 | 02:30
The new 800V CoolMOS MOSFET from Infineon
The new 800V CoolMOS MOSFET from Infineon

The latest 800V CoolMOS P7 800V MOSFET from Infineon is based on their superjunction technology. The device is available in twelve classes of RDS(on) beginning with  0.28 Ω and in six package options. It is particularly suited to high voltage switching applications, flyback applications including adapter and charger, LED lighting, audio SMPS, AUX and industrial power.

This product family offers 0.1 percent to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to 800V CoolMOS™ C3 tested in flyback based applications. A built-in Zener diode reduces the risk of damage from electrostatic discharges and results in fewer failures during the manufacturing process. The FET can operate with a VGS(th) of just 3 V (±0.5 V). This makes them suitable for use in low-voltage (battery) applications where they can provide low switching losses. The low gate threshold helps reduce the chances of the MOSFET operating in its lossy, linear region.

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