IR Launch Welding IGBT

August 18, 2014 | 23:42
IR Launch Welding IGBT
IR Launch Welding IGBT

International Rectifier have announced the introduction of the IR66xx series of high performance 600V ultra-fast Trench-gate Field Stop insulated-gate bipolar transistors (IGBTs). The new high power family of devices features extremely low conduction and switching losses optimized for welding applications.

Utilizing Trench thin wafer technology to offer lowest conduction and switching losses, the new devices are co-packaged with a soft recovery low Qrr diode and feature ultra-fast switching (8 KHz - 30 KHz) with 5 µs short circuit rating. The 600 V IGBTs also feature low VCE(ON) and positive temperature coefficient for easy paralleling.

“Delivering lowest conduction and switching losses, the IR66xx series provides a rugged, reliable solution for designers looking to optimize performance in welding applications,” said Llewellyn Vaughan-Edmunds, IGBT Product Marketing Manager, IR’s Energy Saving Products Business Unit.

The IR66xx series of IGBTs also features high switching frequency, maximum junction temperature of 175°C and low EMI for improved reliability, higher system efficiency and rugged transient performance.

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