Dual N channel TrenchFET offers lowest RDSON

March 30, 2014 | 22:58
Dual N channel TrenchFET offers lowest RDSON
Dual N channel TrenchFET offers lowest RDSON

Vishay Intertechnology Inc. have introduced a dual N-channel TrenchFET power MOSFET in a 2.05 mm square, thermally enhanced PowerPAK SC-70 outline.

The SiA936EDJ device is optimized for use in load and charger switch circuits, DC/DC converters, motor driving H-bridges and battery protection for power management in mobile devices. For healthcare applications it is suitable for non-implantable portable products and also for use with small brushless DC motors in handheld consumer electronics. It offers extremely low on-resistance of 34 milliohms at 4.5 V, 37 milliohms at 3.7 V and 45 milliohms at 2.5 V. The level of on-resistance at 2.5 V is 11.7 % lower than the closest competing 8 V VGS device while providing a higher (G-S) guard band and 15.1 % lower than the closest competing device with a 12 V VGS. A lower RDSON leads to more efficient designs which optimize battery life.

Packing two MOSFETs into the one compact package reduces PCB footprint and reduces overall component count. The MOSFET is 100 % Rg-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU. Samples and production quantities of the SiA936EDJ are now shipping.

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