Toshiba’s 4500 V at 1200 A IEGT Module
May 7, 2015
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Toshiba Electronics Europe has launched a high – current 4500 V, 1200 A power module for use in rail traction, industrial motor control, renewable energy systems and electricity transmission and distribution applications. The MG1200GXH1US61 PMI (plastic case module IEGT) integrates an N-channel IEGT (injection-enhanced gate transistor) and a fast recovery diode (FRD) into a standard package with a footprint of just 140 mm x 190 mm.
Designed to be used at much higher currents in the 4500 V module class, the new module will also save energy, space and weight in high-power switching converter/inverter and motor control designs. The MG1200GXH1SU61 offers an isolation voltage rating of 6000 VAC (rms for one minute) and can handle a peak turn-off collector current of 2400 A. Collector power dissipation (at 25°C) is 4000 W. An operating temperature range of -40°C to +150°C ensures compatibility with the extended temperature environments that characterize high voltage applications.
Designed to be used at much higher currents in the 4500 V module class, the new module will also save energy, space and weight in high-power switching converter/inverter and motor control designs. The MG1200GXH1SU61 offers an isolation voltage rating of 6000 VAC (rms for one minute) and can handle a peak turn-off collector current of 2400 A. Collector power dissipation (at 25°C) is 4000 W. An operating temperature range of -40°C to +150°C ensures compatibility with the extended temperature environments that characterize high voltage applications.
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