A MOSFET for 1 kV

October 27, 2016 | 10:02
A MOSFET for 1 kV
A MOSFET for 1 kV
The US company Wolfspeed, which specializes in silicon carbide (SiC) power devices, has unveiled a 1000 V MOSFET. The new MOSFET is optimized for use in fast chargers (for example, for electric vehicles) and industrial power supplies. Using the new MOSFET can reduce the component count by 30%, boost power density by a factor of 3, and increase output power by 33% in comparison to conventional power MOSFETs.

The maximum drain-source voltage rating of 1 kV allows designers to reduce the component count by switching from silicon-based three-stage topologies to simpler two-stage topologies. The ultra-low output capacitance of just 60 pF drastically reduces switching losses and thus allows smaller heat sinks to be used, enabling higher power with a smaller PCB footprint. The new MOSFET can also operate at higher switching frequencies, reducing the size of the resonant circuit components.

Wolfspeed offers a reference design for the new MOSFET in the form of a 20 kW full bridge resonant LLC converter, available under part number CRD-20DD09P-2. This fully assembled hardware package allows designers to quickly evaluate the new 1000 V SiC MOSFET and verify its faster switching speeds and improved power characteristics.
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