Fight losses with 650-V silicon carbide (SiC) FETs

March 12, 2018 | 00:00
Image: UnitedSiC.
Image: UnitedSiC.
UnitedSiC has introduced drop-in replacements for silicon superjunction MOSFETs in the form of a new series of 650-V silicon carbide (SiC) FETs. Announced at the 2018 Applied Power Electronics Conference (APEC), the components operate with standard Si-MOSFET gate drive, eliminating the need to redesign drive circuits while simultaneously offering low RDS(ON) and low gate charge to reduce system losses.

The devices are used for power factor correction and DC/DC conversion in both hard-switched and ZVS-switched systems for electric vehicle (EV) chargers, power supplies, motor drives and renewable energy inverter applications.

The UJ3C series features a maximum drain current rating from 31 amps to 85 amps with RDS(ON) specified at 27 mΩ. Furthermore, the built-in low Qrr body diode eliminates the need for an anti-parallel diode. The devices are capable of switching frequencies up to 500 kHz allowing designers to reduce the size and cost of other system components such as bulky inductors, capacitors and thermal management parts. More information may be found here.

Sadly the new devices are relatively expensive at a (quoted) $7.69 in 1 Kunit quantities. So "low loss" may need explaining to your CFO.
 
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