1.2-kV SiC MOSFET has four legs

April 25, 2017 | 00:00
Image: Wolfspeed (a Cree company)
Image: Wolfspeed (a Cree company)
So we know Wolfman Jack as a blabbering radio DJ, Wolfmother as a tolerable Led Zeppelin imitation, and Wolfson Microelectronics (now Cirrus Logic) as digital-audio specialists. Now add Wolfspeed (a Cree company) as a manufacturer of a silicon-carbide (SiC) FET with a spectacular Vds specification of 1200 V.

Available from Richardson RFPD, the Wolfspeed C3M0075120K comes in a four-lead TO-247-4 package – with a separate driver source explaining the fourth pin. Make sure you get that right in your CAD component library! The package has 8-mm creepage distance between drain and source.

The intrinsic diode is said to be fast, with low reverse recovery (Qrr).

Applications in renewable energy, electric vehicle charging, high-voltage dc-dc conversion and switch-mode power supplies are expected.

C3M0075120K quick specs:
  • 1.2 kV drain-source
  • 30.8 A continuous drain current at 25 °C
  • 75 mΩ Rds(on)
  • 51 nC total gate charge (Qg)
  • 150 °C max junction
  • 58 pF output capacitance (Coss)
  • 220 nC reverse-recovery charge (Qrr)
  • 18 ns reverse-recover (Trr)
 
That’s for our page skimmers, more extensive specifications and the link to the datasheet are here.
 
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