Thanks to the lowest on-state resistance (RDS(on)) the BiC MOSFETs enable reduced losses at a good priceperformance ratio. Furthermore, low thermal impedance between Junction to Case (RthJC) provides excellent thermal behavior, which promotes a lower full load temperature. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the needs for snubber circuits. As a result engineering costs and effort are reduced.
The 175° rating of the BiC MOSFETs facilitates designs with either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. In addition, with the increases in the temperature rating, 20 percent improvement in the safe operating area (SAO) is achieved.
With their performance data the BiC MOSFETs are ideal for applications such as telecom, server, three-phase inverter, low voltage drives as well as for class D audio applications. The Infineon OptiMOS™ BiC power MOS-FET portfolio includes versions from 60V to 250V.
You will find more information on the Infineon OptiMOS™ power MOSFET family on the e-commerce platform www.rutronik24.com (where you can also place orders directly): https://www.rutronik24.com/search-result/nojs:1337/qs:TMOS2541%20TMOS2542/reset:0
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At Rutronik: Infineon OptiMOS™ power MOSFETs with highest power density and efficiency
July 1, 2019 | 10:00
Infineon OptiMOS™ 3 and 5 best-in-class (BiC) power MOSFETs in space-saving SuperSO8 package enable higher power density in addition to improved robustness compared to former models.Therefore, system costs are reduced while the overall performance is increased. The OptiMOS™ BiC power MOSFETs are available at www.Rutronik24.com.