Improved High Voltage N-Channel Devices

August 31, 2015 | 00:51
The new 600V MDmesh M2 N-channel FETS
The new 600V MDmesh M2 N-channel FETS
STMicroelectronics has added to its MDmesh M2 family of N-channel power MOSFETs with new devices rated at 600 V offering significantly improved switching characteristics. The new 600V MDmesh M2 EP devices use ST’s conventional strip layout with a new improved vertical structure and an optimized diffusion process to achieve enhanced switching characteristics. Together with their very low ON-resistance they also have the lowest available (16 nC) turn-off switching losses. STMicroelectronics expect that their characteristics will make them suitable for use in very-high-frequency converters (with operating frequencies higher than 150 kHz).

They are suited to both hard- and soft-switching topologies, including resonant topologies such as LLC, where the new devices offer extremely low switching losses. Their optimized capacitance profile improves efficiency under light-load conditions. In addition to the very low gate charge (Qg) exhibited by all MDmesh M2 devices, the M2 EP devices feature up to a 20% reduction in Eoff (turn-off energy), thus reducing by the same percentage, the turn-off switching losses in hard-switching converters. The enhanced shape of the turn-off waveforms leads to higher efficiency and lower noise in resonant converters, allowing more energy to be stored and re-used, rather than dissipated as heat, cycle by cycle.

The devices are offered in a wide range of packages (PowerFLAT 5 x 6 HV, DPAK, D2PAK, TO-220, TO-220FP, I2PAKFP, and TO-247) the MDmesh M2 EP family targets power-supply applications that require the highest efficiency levels. All devices are in full production, with pricing starting at $1.5 per unit for the STD15N60M2-EP in a DPAK package for orders of 1000 pieces.
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